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Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-125 AAT:K | Dynamic random access memory | DEX GE WETB RAM content is retained

SKU: 97330301419

4.2
USD12.03 USD52.03

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Ships within 48 hours · Estimated delivery Jul 27 - Aug 1

Description

RAM content is retained

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Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-125 AAT:K | Dynamic random access memory | DEX GE WETB RAM content is retainedMicron Technology DRAM SDRAM DDR3L, Part #: MT41K128M16JT 125 AAT: K features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Programmable posted CAS additive latency (AL)

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